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Continue to ChatElectron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD - https://avesis.gazi.edu.tr/yayin/68b6eb1d-c39a-4720-aa55-0e52aeec96ad/electron-transport-properties-in-al0-25ga0-75n-aln-gan-heterostructures-with-different-ingan-back-barrier-layers-and-gan-channel-thicknesses-grown-by-mocvd